IRFB3507PBF

更新时间： 2024-11-18 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	431K
描述
HEXFET㈢Power MOSFET

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中文翻译

获取价格

数据手册

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IRFB3507PBF 数据手册

PD - 95935B

IRFB3507PbF

IRFS3507PbF

IRFSL3507PbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

l Lead-Free

V_DSS

R_DS(on)typ.

max.

75V

7.0m

8.8m

97A

I_D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

D²Pak

IRFS3507PbF

TO-262

IRFSL3507PbF

TO-220AB

IRFB3507PbF

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

390

P_D@T_C= 25°C

190

Maximum Power Dissipation

Linear Derating Factor

1.3

W/°C

V_GS

± 20

Gate-to-Source Voltage

5.0

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

280

Avalanche Current

I_AR

See Fig. 14, 15, 16a, 16b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.77

–––

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

–––

www.irf.com

01/20/06

12 3 4 5 6 7...12

中文翻译

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