5秒后页面跳转
IRFB3307Z PDF预览

IRFB3307Z

更新时间: 2023-12-06 20:09:05
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 321K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

IRFB3307Z 数据手册

 浏览型号IRFB3307Z的Datasheet PDF文件第2页浏览型号IRFB3307Z的Datasheet PDF文件第3页浏览型号IRFB3307Z的Datasheet PDF文件第4页浏览型号IRFB3307Z的Datasheet PDF文件第5页浏览型号IRFB3307Z的Datasheet PDF文件第6页浏览型号IRFB3307Z的Datasheet PDF文件第7页 
PD - 97214D  
IRFB3307ZPbF  
IRFS3307ZPbF  
Applications  
l High Efficiency Synchronous Rectification in  
IRFSL3307ZPbF  
SMPS  
HEXFET® Power MOSFET  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
75V  
4.6m  
5.8m  
128A  
Ω
Ω
G
Benefits  
120A  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
D
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
S
D
S
D
G
G
G
D2Pak  
TO-262  
TO-220AB  
IRFB3307ZPbF  
IRFS3307ZPbF  
IRFSL3307ZPbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
128  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
90  
A
120  
512  
PD @TC = 25°C  
W
230  
Maximum Power Dissipation  
1.5  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
6.7  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
140  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.65  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
Rθ  
40  
JA  
www.irf.com  
1
08/19/11  

与IRFB3307Z相关器件

型号 品牌 描述 获取价格 数据表
IRFB3307ZGPBF INFINEON HEXFETPower MOSFET

获取价格

IRFB3307ZPBF INFINEON HEXFET Power MOSFET

获取价格

IRFB33N15D INFINEON Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)

获取价格

IRFB33N15DPBF INFINEON High frequency DC-DC converters

获取价格

IRFB3407ZPBF INFINEON Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

获取价格

IRFB3507 INFINEON HEXFET Power MOSFET

获取价格