是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.64 | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.0045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 300 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7NA2907SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7NA2907SCV | INFINEON |
获取价格 |
75V Single N-Channel Hi-Rel MOSFET in a SMD-2 package - Screening Level TXV |
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IRF7NA2907SCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7NJZ44V | INFINEON |
获取价格 |
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRF7NJZ44VPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7Y1405CM | INFINEON |
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HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) |
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IRF7Y1405CMPBF | INFINEON |
获取价格 |
暂无描述 |
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IRF7YSZ44VCM | INFINEON |
获取价格 |
HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO- |
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IRF7YSZ44VCMPBF | INFINEON |
获取价格 |
暂无描述 |
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IRF8010 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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