IRF7YSZ44VCMPBF

更新时间： 2024-09-14 13:08:47

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英飞凌 - INFINEON		/
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7页	113K
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IRF7YSZ44VCMPBF 数据手册

PD - 94603

HEXFET^®POWER MOSFET

THRU-HOLE (Low-ohmic TO-257AA)

IRF7YSZ44VCM

60V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7YSZ44VCM

60V

0.0195Ω 20A*

Low Ohmic

TO-257AA

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

20*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

5.0

V/ns

dv/dt

1.6

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

4.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

02/07/03

12 3 4 5 6 7

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