Datasheet > IRF8113PBF-1

IRF8113PBF-1

更新时间： 2024-09-14 19:50:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	249K
描述
Power Field-Effect Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRF8113PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.66
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRF8113PBF-1 数据手册

IRF8113PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

5.6

6.8

SO-8

Top View

17.2

(@T_A= 25°C)

Features

Industry-standard pinout SO-8 Package

Benefits

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF8113PbF-1

IRF8113TRPbF-1

IRF8113PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

17.2

13.8

135

2.5

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through ꢀ are on page 10

Submit Datasheet Feedback

June 23, 2014

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF8113PBF-1相关器件

型号	品牌	获取价格	描述	数据表
IRF8113TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF8113TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRF8113TRPBF	INFINEON	获取价格	Synchronous MOSFET for Notebook Processor Power
IRF8113TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8113UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon,
IRF8113UTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon,
IRF82	STMICROELECTRONICS	获取价格	N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
IRF820	INTERSIL	获取价格	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET
IRF820	ROCHESTER	获取价格	2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF820	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)