Datasheet > IRF8113PBF-1

IRF8113PBF-1

更新时间： 2024-11-19 19:50:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	249K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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IRF8113PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.66
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRF8113PBF-1 数据手册

IRF8113PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

5.6

6.8

SO-8

Top View

17.2

(@T_A= 25°C)

Features

Industry-standard pinout SO-8 Package

Benefits

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF8113PbF-1

IRF8113TRPbF-1

IRF8113PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

17.2

13.8

135

2.5

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through ꢀ are on page 10

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June 23, 2014

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