Datasheet > IRF8113TR

IRF8113TR

更新时间： 2024-11-20 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	410K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:17.2A;Vgs(th)(V):±20;漏源导通电阻:5.6mΩ@10V;漏源导通电阻:6.8mΩ@4.5V

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IRF8113TR 数据手册

IRF8113TR

30V N-Channel MOSFET

UMW

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in Networking

Systems

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

V_DS(V) = 30V

I_D=17.2A (V_GS= 10V)

R_DS(ON)< 5.6mΩ (V _GS= 10V)

R_DS(ON)< 6.8mΩ (V _GS= 4.5V)

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

17.2

13.8

135

2.5

@ T_A= 25°C

@ T_A= 70°C

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θJL

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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