Datasheet > IRF820

IRF820

更新时间： 2024-10-29 22:24:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	58K
描述
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

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替代型号

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IRF820 数据手册

IRF820

Data Sheet

July 1999

File Number 1581.4

2.5A, 500V, 3.000 Ohm, N-Channel Power

MOSFET

Features

• 2.5A, 500V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 3.000Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17405.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF820

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-245

12 3 4 5 6 7

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IRF820 替代型号

型号	品牌	替代类型	描述	数据表
IRF822	STMICROELECTRONICS	功能相似	N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
IRF820	STMICROELECTRONICS	功能相似	N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
STP4NB50	STMICROELECTRONICS	功能相似	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-22

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IRF820-019PBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF82016	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
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