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IRF820 PDF预览

IRF820

更新时间: 2024-11-22 22:24:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 58K
描述
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

IRF820 数据手册

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IRF820  
Data Sheet  
July 1999  
File Number 1581.4  
2.5A, 500V, 3.000 Ohm, N-Channel Power  
MOSFET  
Features  
• 2.5A, 500V  
This N-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
= 3.000  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17405.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
IRF820  
D
IRF820  
TO-220AB  
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-245  

IRF820 替代型号

型号 品牌 替代类型 描述 数据表
IRF822 STMICROELECTRONICS

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