Datasheet > IRF8113TR

IRF8113TR

更新时间： 2024-09-14 21:03:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	203K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

获取价格

数据手册
替代型号

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IRF8113TR 数据手册

PD - 94637A

IRF8113

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

Processor Power

V_DSS

30V

R_DS(on)max

Qg Typ.

24nC

5.6m:@V_GS= 10V

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in Networking

Systems

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

17.2

13.8

135

2.5

@ T_A= 25°C

@ T_A= 70°C

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through ꢀ are on page 10

www.irf.com

1/5/04

12 3 4 5 6 7...10

中文翻译

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IRF8113TR 替代型号

型号	品牌	替代类型	描述	数据表
IRF8113TRPBF	INFINEON	类似代替	Synchronous MOSFET for Notebook Processor Power

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