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IRF820 PDF预览

IRF820

更新时间: 2024-10-29 22:24:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 94K
描述
N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

IRF820 数据手册

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IRF820  
N - CHANNEL 500V - 2.5 - 2.5 A - TO-220  
PowerMESH MOSFET  
TYPE  
IRF820  
VDSS  
RDS(on)  
ID  
500 V  
< 3 Ω  
2.5 A  
TYPICAL RDS(on) = 2.5 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATECHARGE MINIMIZED  
3
DESCRIPTION  
This power MOSFET is designed using the  
company’s consolidated strip layout-based MESH  
2
1
OVERLAY  
process. This technology matches  
TO-220  
and improves the performances compared with  
standardparts from various sources.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
ID  
500  
± 20  
2.5  
V
Drain Current (continuous) at Tc = 25 oC  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
1.6  
A
IDM()  
Ptot  
Drain Current (pulsed)  
10  
A
o
Total Dissipation at Tc = 25 C  
80  
W
Derating Factor  
0.64  
3.5  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 2.5 A, di/dt 50 A/µs, VDD V(BR)DSS, Tj TJMAX  
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet  
1/8  
August 1998  

IRF820 替代型号

型号 品牌 替代类型 描述 数据表
STP4NB50 STMICROELECTRONICS

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N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-22
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