型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF820_R4943 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF820-013PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF820-019PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF82016 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF820-220 | SUNTAC |
获取价格 |
POWER MOSFET | |
IRF820-220FP | SUNTAC |
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POWER MOSFET | |
IRF820-251 | SUNTAC |
获取价格 |
POWER MOSFET | |
IRF820-252 | SUNTAC |
获取价格 |
POWER MOSFET | |
IRF820A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF820A | VISHAY |
获取价格 |
Power MOSFET |