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IRF820 PDF预览

IRF820

更新时间: 2024-10-30 05:39:27
品牌 Logo 应用领域
SUNTAC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
5页 204K
描述
POWER MOSFET

IRF820 数据手册

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IRF820  
POWER MOSFET  
!
GENERAL DESCRIPTION  
FEATURES  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. In addition, this  
advanced MOSFET is designed to withstand high energy in  
avalanche and commutation modes. The new energy  
efficient design also offers a drain-to-source diode with a  
fast recovery time. Designed for high voltage, high speed  
switching applications in power supplies, converters and  
PWM motor controls, these devices are particularly well  
suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer  
additional and safety margin against unexpected voltage  
transients.  
'ꢀ Robust High Voltage Termination  
'ꢀ Avalanche Energy Specified  
'ꢀ Source-to-Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
'ꢀ Diode is Characterized for Use in Bridge Circuits  
'ꢀ IDSS and VDS(on) Specified at Elevated Temperature  
PIN CONFIGURATION  
SYMBOL  
TO-220/TO-220FP  
Front View  
TO-252  
Front View  
TO-251  
Front View  
N-Channel MOSFET  
D
G
2
3
1
2
3
1
S
2
3
1
ABSOLUTE MAXIMUM RATINGS  
Rating  
Drain to Current Continuous  
Pulsed  
Symbol  
ID  
Value  
2.0  
Unit  
A
IDM  
9.0  
Gate-to-Source Voltage Continue  
Non-repetitive  
VGS  
VGSM  
PD  
20  
V
V
40  
Total Power Dissipation  
W
TO-251/TO-252  
60  
60  
TO-220  
TO-220FP  
32  
Operating and Storage Temperature Range  
Single Pulse Drain-to-Source Avalanche Energy TJ = 25R  
(VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25)  
Thermal Resistance Junction to Case  
Junction to Ambient  
TJ, TSTG  
EAS  
-55 to 150  
20  
R
mJ  
%
1.0  
62.5  
260  
R/W  
JC  
%
JA  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds  
TL  
R
Page 1  

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