Datasheet > IRF8113UTRPBF

IRF8113UTRPBF

更新时间： 2024-11-23 21:15:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
10页	261K
描述
Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, MS-012AA, SOP-8

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IRF8113UTRPBF 数据手册

PD - 96077A

IRF8113UPbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

Processor Power

V_DSS

30V

R_DS(on)max

Qg Typ.

24nC

5.6m @V_GS= 10V

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche

Voltage and Current

l 100% Tested for R_G

l Lead-Free

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

17.2

13.8

135

2.5

@ T_A= 25°C

@ T_A= 70°C

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through ꢀ are on page 10

www.irf.com

09/18/06

12 3 4 5 6 7...10

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