IRF8010SPBF

更新时间： 2024-09-14 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	221K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF8010SPBF 数据手册

PD - 95433

IRF8010SPbF

SMPS MOSFET

IRF8010LPbF

Applications

HEXFET^®Power MOSFET

l High frequency DC-DC converters

l UPS and Motor Control

l Lead-Free

V_DSS

R_DS(on)max

I_D

80A

100V

15mΩ

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF8010S

TO-262

IRF8010L

l Typical R_DS(on)= 12mΩ

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

320

260

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.8

W/°C

± 20

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.57

0.80

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Junction-to-Case (end of life)

–––

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient (PCB Mount, steady state)

Notes through are on page 8

www.irf.com

06/21/04

12 3 4 5 6 7...10

中文翻译

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IRF8010SPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8010STRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRF8010S	INFINEON	功能相似	SMPS MOSFET
FDB3632	FAIRCHILD	功能相似	N-Channel PowerTrench MOSFET 100V, 80A, 9mз

与IRF8010SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF8010STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRF8010STRRPBF	INFINEON	获取价格	暂无描述
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IRF8113PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF8113PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8113TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF8113TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRF8113TRPBF	INFINEON	获取价格	Synchronous MOSFET for Notebook Processor Power
IRF8113TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8113UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon,