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IRF8010LPBF PDF预览

IRF8010LPBF

更新时间: 2024-11-23 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 221K
描述
HEXFET Power MOSFET

IRF8010LPBF 数据手册

 浏览型号IRF8010LPBF的Datasheet PDF文件第2页浏览型号IRF8010LPBF的Datasheet PDF文件第3页浏览型号IRF8010LPBF的Datasheet PDF文件第4页浏览型号IRF8010LPBF的Datasheet PDF文件第5页浏览型号IRF8010LPBF的Datasheet PDF文件第6页浏览型号IRF8010LPBF的Datasheet PDF文件第7页 
PD - 95433  
IRF8010SPbF  
SMPS MOSFET  
IRF8010LPbF  
Applications  
HEXFET® Power MOSFET  
l High frequency DC-DC converters  
l UPS and Motor Control  
l Lead-Free  
VDSS  
RDS(on) max  
ID  
80A  
‡
100V  
15mΩ  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRF8010S  
TO-262  
IRF8010L  
l Typical RDS(on) = 12mΩ  
Absolute Maximum Ratings  
Parameter  
Max.  
80  
Units  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
57  
320  
260  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.8  
W/°C  
V
V
± 20  
GS  
dv/dt  
T
J
Peak Diode Recovery dv/dt  
Operating Junction and  
16  
V/ns  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.57  
0.80  
–––  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Junction-to-Case (end of life)  
–––  
°C/W  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient (PCB Mount, steady state)  
40  
Notes  through ˆ are on page 8  
www.irf.com  
1
06/21/04  

IRF8010LPBF 替代型号

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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时