IRF8010LPBF

更新时间： 2024-09-14 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	221K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF8010LPBF 数据手册

PD - 95433

IRF8010SPbF

SMPS MOSFET

IRF8010LPbF

Applications

HEXFET^®Power MOSFET

l High frequency DC-DC converters

l UPS and Motor Control

l Lead-Free

V_DSS

R_DS(on)max

I_D

80A

100V

15mΩ

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF8010S

TO-262

IRF8010L

l Typical R_DS(on)= 12mΩ

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

320

260

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.8

W/°C

± 20

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.57

0.80

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Junction-to-Case (end of life)

–––

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient (PCB Mount, steady state)

Notes through are on page 8

www.irf.com

06/21/04

12 3 4 5 6 7...10

中文翻译

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IRF8010LPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8010PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRF8010LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF8010PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8010S	INFINEON	获取价格	SMPS MOSFET
IRF8010SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8010STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRF8010STRRPBF	INFINEON	获取价格	暂无描述
IRF8113	INFINEON	获取价格	Power MOSFET
IRF8113PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF8113PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8113TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF8113TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时