IRF8010L

更新时间： 2024-09-14 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
10页	223K
描述
SMPS MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF8010L 数据手册

PD - 94573

IRF8010S

SMPS MOSFET

IRF8010L

Applications

l High frequency DC-DC converters

l UPS and Motor Control

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

I_D

Benefits

100V

15mΩ

80A

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

l Typical R_DS(on)= 12mΩ

D²Pak

TO-262

IRF8010L

IRF8010S

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

320

260

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.8

W/°C

± 20

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.57

0.80

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Junction-to-Case (end of life)

–––

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient (PCB Mount, steady state)

Notes through are on page 8

www.irf.com

01/28/03

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF8010L相关器件

型号	品牌	获取价格	描述	数据表
IRF8010LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8010PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8010S	INFINEON	获取价格	SMPS MOSFET
IRF8010SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8010STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRF8010STRRPBF	INFINEON	获取价格	暂无描述
IRF8113	INFINEON	获取价格	Power MOSFET
IRF8113PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF8113PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8113TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET