IRF8010

更新时间： 2024-09-08 22:24:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	495K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF8010 数据手册

PD - 94497

SMPS MOSFET

IRF8010

Applications

HEXFET^®Power MOSFET

ꢂ High frequency DC-DC converters

ꢂ UPS and Motor Control

V_DSS

R_DS(on)max

I_D

80A

Benefits

ꢁ

100V

15mΩ

ꢂ Low Gate-to-Drain Charge to Reduce

Switching Losses

ꢂ Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

ꢂ Fully Characterized Avalanche Voltage

and Current

ꢂ Typical R_DS(on)= 12mΩ

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

ꢁ

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

@ T = 100°C

ꢀ

Pulsed Drain Current

Power Dissipation

320

260

@T = 25°C

Linear Derating Factor

Gate-to-Source Voltage

1.8

W/°C

ꢃ

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.57

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Notes ꢀ through ꢁ are on page 8

www.irf.com

08/23/02

12 3 4 5 6 7 8

中文翻译

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