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IRF7NJZ44VPBF

更新时间： 2024-09-08 13:02:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
7页	115K
描述
Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN

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IRF7NJZ44VPBF 数据手册

PD - 94433

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRF7NJZ44V

60V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7NJZ44V

60V

0.0165Ω 22A*

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

SMD-0.5

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

22*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

5.0

V/ns

dv/dt

2.2

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package and internal wires

For footnotes refer to the last page

www.irf.com

04/24/02

12 3 4 5 6 7

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