生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | compliant | 风险等级: | 5.69 |
雪崩能效等级(Eas): | 66 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.0165 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 88 A |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRF7NJZ44VPBF | INFINEON | Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7Y1405CM | INFINEON | HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) |
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IRF7Y1405CMPBF | INFINEON | 暂无描述 |
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IRF7YSZ44VCM | INFINEON | HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO- |
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IRF7YSZ44VCMPBF | INFINEON | 暂无描述 |
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IRF8010 | INFINEON | HEXFET Power MOSFET |
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