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IRF7NJZ44V PDF预览

IRF7NJZ44V

更新时间: 2024-02-14 23:42:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 115K
描述
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-0.5)

IRF7NJZ44V 技术参数

生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
Reach Compliance Code:compliant风险等级:5.69
雪崩能效等级(Eas):66 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):22 A最大漏源导通电阻:0.0165 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):88 A
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF7NJZ44V 数据手册

 浏览型号IRF7NJZ44V的Datasheet PDF文件第2页浏览型号IRF7NJZ44V的Datasheet PDF文件第3页浏览型号IRF7NJZ44V的Datasheet PDF文件第4页浏览型号IRF7NJZ44V的Datasheet PDF文件第5页浏览型号IRF7NJZ44V的Datasheet PDF文件第6页浏览型号IRF7NJZ44V的Datasheet PDF文件第7页 
PD - 94433  
HEXFET® POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
IRF7NJZ44V  
60V, N-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF7NJZ44V  
60V  
0.016522A*  
Seventh Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
SMD-0.5  
Features:  
n
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Light Weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
22*  
22*  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
88  
DM  
@ T = 25°C  
P
50  
W
W/°C  
V
D
C
Linear Derating Factor  
0.4  
V
Gate-to-Source Voltage  
±20  
66  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
22  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
5.0  
mJ  
V/ns  
AR  
dv/dt  
2.2  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Package Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
* Current is limited by package and internal wires  
For footnotes refer to the last page  
www.irf.com  
1
04/24/02  

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