Datasheet > IRF7NA2907SCX

IRF7NA2907SCX

更新时间： 2024-02-28 05:46:22

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
7页	172K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETICALLY SEALED, SMD-2, 3 PIN

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技术参数
数据手册

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IRF7NA2907SCX 技术参数

生命周期：	Active	包装说明：	CHIP CARRIER, R-XBCC-N3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.66	雪崩能效等级（Eas）：	500 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	75 V	最大漏极电流 (ID)：	75 A
最大漏源导通电阻：	0.0045 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-XBCC-N3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	300 A	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRF7NA2907SCX 数据手册

PD-94337C

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-2)

IRF7NA2907

75V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7NA2907

75V

0.0045Ω 75A*

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, inverters,

choppers, audio amplifiers and high-energy pulse

circuits.

SMD-2

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

75*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

300

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

6.4

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

01/27/15

12 3 4 5 6 7

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