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SUP50N10-21P-GE3 PDF预览

SUP50N10-21P-GE3

更新时间: 2024-11-12 21:22:03
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 127K
描述
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

SUP50N10-21P-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.79雪崩能效等级(Eas):80 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.021 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):60 A
表面贴装:NO端子面层:PURE MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUP50N10-21P-GE3 数据手册

 浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第2页浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第3页浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第4页浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第5页浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第6页浏览型号SUP50N10-21P-GE3的Datasheet PDF文件第7页 
SUP50N10-21P  
Vishay Siliconix  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) () Max.  
Qg (Typ.)  
I
D (A)  
100 % Rg and UIS Tested  
50d  
49.7  
45  
0.021 at VGS = 10 V  
0.023 at VGS = 8 V  
0.028 at VGS = 6 V  
Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
100  
30.2 nC  
APPLICATIONS  
TO-220AB  
DC/AC Inverters  
Primary Side Switching  
Synchronous Rectification  
D
G
G D S  
Top View  
Ordering Information:  
SUP50N10-21P-GE3 (Lead (Pb)-free and Halogen-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
C
Parameter  
Symbol  
Limit  
100  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
50d  
T
C = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
TC = 70 °C  
41.6  
60  
A
IDM  
IAS  
Pulsed Drain Current (t = 300 µs)  
Avalanche Current  
40  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
80  
mJ  
W
125b  
3.1  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
1
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 62781  
S12-2730-Rev. A, 12-Nov-12  
www.vishay.com  
1
For technical questions, contact:: pmostechsupport@vishay.com  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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