Datasheet > SUP60N06-12P

SUP60N06-12P

更新时间： 2024-11-12 08:58:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	168K
描述
N-Channel 60-V (D-S) MOSFET

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SUP60N06-12P 数据手册

SUP60N06-12P

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

Q_g(Typ.)

Definition

60^d

TrenchFET^®Power MOSFET

100 % R_gTested

0.012 at V_GS= 10 V

•

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

TO-220AB

•

Synchronous Rectifier

•

Power Supplies

G D

Top View

Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)

SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

60^d

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

54^d

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

100^b

3.25

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

1.25

Notes:

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Package limited.

Document Number: 69070

S10-1475-Rev. C, 05-Jul-10

www.vishay.com

12 3 4 5 6 7

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