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SUP60N06-12P PDF预览

SUP60N06-12P

更新时间: 2024-11-12 08:58:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 168K
描述
N-Channel 60-V (D-S) MOSFET

SUP60N06-12P 数据手册

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SUP60N06-12P  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)  
Qg (Typ.)  
Definition  
60d  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.012 at VGS = 10 V  
60  
33  
100 % UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
TO-220AB  
Synchronous Rectifier  
Power Supplies  
D
G
G D  
S
Top View  
S
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)  
SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
60d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
54d  
80  
40  
80  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
mJ  
W
100b  
3.25  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
1.25  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 69070  
S10-1475-Rev. C, 05-Jul-10  
www.vishay.com  
1

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