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SUP70N03-09BP-E3 PDF预览

SUP70N03-09BP-E3

更新时间: 2024-11-12 20:00:03
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威世 - VISHAY /
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6页 52K
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SUP70N03-09BP-E3 数据手册

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SUP/SUB70N03-09BP  
New Product  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
0.009 @ V = 10 V  
70  
GS  
30  
0.013 @ V = 4.5 V  
GS  
60  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D  
Top View  
SUP70N03-09BP  
S
S
N-Channel MOSFET  
SUB70N03-09BP  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
b
T
= 25_C  
= 100_C  
70  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
50  
200  
30  
C
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
61  
mJ  
W
AR  
b
Power Dissipation  
T
= 25_C  
P
93  
C
D
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
PCB Mount (TO-263)  
40  
62.5  
1.6  
Junction-to-Ambient  
Junction-to-Case  
R
R
thJA  
Free Air (TO-220AB)  
_C/W  
thJC  
Notes:  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71229  
S-20102—Rev. B, 11-Mar-02  
www.vishay.com  
1

SUP70N03-09BP-E3 替代型号

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类似代替

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TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB