Datasheet > SUP75N05-06-E3

SUP75N05-06-E3

更新时间： 2024-11-12 19:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	95K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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SUP75N05-06-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.82
配置：	Single	最大漏极电流 (Abs) (ID)：	75 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	187 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches：	1

SUP75N05-06-E3 数据手册

SUP/SUB75N05-06

Vishay Siliconix

N-Channel 50-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.006

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB75N05-06

Top View

N-Channel MOSFET

SUP75N05-06

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

= 125_C

Continuous Drain Current

(T = 175_C)

240

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

280

= 25_C (TO-220AB and TO-263)

250

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

_C/W

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70292

S-05110—Rev. E, 10-Dec-01

www.vishay.com

2-1

12 3 4 5 6

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