Datasheet > SUP75N08

SUP75N08

更新时间： 2024-09-12 22:17:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	83K
描述
N-Channel 75-V (D-S), 175C MOSFET

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SUP75N08 数据手册

_C/W

SUP/SUB75N08-09L

New Product

Vishay Siliconix

N-Channel 75-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.009 @ V = 10 V

"75

0.011 @ V = 4.5 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB75N08-09L

Top View

N-Channel MOSFET

SUP75N08-09L

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

"75

Continuous Drain Current (T = 175_C)

= 125_C

"66

"240

"75

280

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

= 25_C (TO-220AB and TO-263)

250

Maximum Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70870

S-60951—Rev. A, 26-Apr-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5

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