Datasheet > SUP85N04-04

SUP85N04-04

更新时间： 2024-09-12 22:17:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	60K
描述
N-Channel 40-V (D-S) 175C MOSFET

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中文翻译

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数据手册

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SUP85N04-04 数据手册

SUP/SUB85N04-04

Vishay Siliconix

N-Channel 40-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.004 @ V = 10 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

Top View

Ordering Information

SUP85N04-04

SUP85N04-04—E3 (Lead (Pb)-Free)

Ordering Information

SUB85N04-04

SUB85N04-04—E3 (Lead (Pb)-Free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

= 25_C

= 125_C

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Avalanche Current

240

Repetitive Avalanche Energy

L = 0.1 mH

211

= 25_C (TO-220AB and TO-263)

250

Maximum Power Dissipation

= 25_C (TO-263)

3.75

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

Free Air (TO-220AB)

_C/W

thJC

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 71125

S-41261—Rev. C, 05-Jul-04

www.vishay.com

12 3 4 5

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