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SUP90N04-3M3P-GE3 PDF预览

SUP90N04-3M3P-GE3

更新时间: 2024-11-26 08:58:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
6页 107K
描述
N-Channel 40 V (D-S) MOSFET

SUP90N04-3M3P-GE3 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:8.45Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:403886
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220AB
Samacsys Released Date:2019-11-26 04:22:27Is Samacsys:N
雪崩能效等级(Eas):180 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):90 A
最大漏极电流 (ID):90 A最大漏源导通电阻:0.0033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUP90N04-3M3P-GE3 数据手册

 浏览型号SUP90N04-3M3P-GE3的Datasheet PDF文件第2页浏览型号SUP90N04-3M3P-GE3的Datasheet PDF文件第3页浏览型号SUP90N04-3M3P-GE3的Datasheet PDF文件第4页浏览型号SUP90N04-3M3P-GE3的Datasheet PDF文件第5页浏览型号SUP90N04-3M3P-GE3的Datasheet PDF文件第6页 
SUP90N04-3m3P  
Vishay Siliconix  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)d  
90  
Definition  
0.0033 at VGS = 10 V  
0.0041 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
40  
87  
90  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Power Supply  
- Secondary Synchronous Rectification  
TO-220AB  
DC/DC Converter  
D
G
G D S  
S
Top View  
N-Channel MOSFET  
Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
C
Parameter  
Symbol  
Limit  
40  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
90d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
90d  
160  
60  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
180  
mJ  
W
125b  
3.1  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
1
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 65902  
S10-0632-Rev. A, 22-Mar-10  
www.vishay.com  
1

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