生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 8.45 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 403886 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (N-Channel) |
Samacsys Package Category: | Transistor Outline, Vertical | Samacsys Footprint Name: | TO-220AB |
Samacsys Released Date: | 2019-11-26 04:22:27 | Is Samacsys: | N |
雪崩能效等级(Eas): | 180 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 90 A |
最大漏极电流 (ID): | 90 A | 最大漏源导通电阻: | 0.0033 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUP90N06-05L | VISHAY |
获取价格 |
N-Channel 60-V (D-S) 175C MOSFET | |
SUP90N06-5M0P | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SUP90N06-5M0P-E3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SUP90N06-6M0P | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SUP90N06-6M0P_09 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SUP90N06-6M0P-E3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SUP90N08-06 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUP90N08-4M8P | VISHAY |
获取价格 |
N-Channel 75-V (D-S) MOSFET | |
SUP90N08-4M8P-E3 | VISHAY |
获取价格 |
N-Channel 75-V (D-S) MOSFET | |
SUP90N08-6M8P | VISHAY |
获取价格 |
N-Channel 75-V (D-S) MOSFET |