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SUP90N10-8M8P PDF预览

SUP90N10-8M8P

更新时间: 2024-11-05 06:14:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 99K
描述
N-Channel 100-V (D-S) MOSFET

SUP90N10-8M8P 数据手册

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SUP90N10-8m8P  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
Qg (Typ)  
175 °C Junction Temperature  
100 % Rg and UIS Tested  
90d  
0.0088 at VGS = 10 V  
100  
97  
RoHS  
COMPLIANT  
APPLICATIONS  
Power Supply  
- Secondary Synchronous Rectification  
Industrial  
TO-220AB  
Primary Switch  
D
G
G D  
S
Top View  
Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
100  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
90d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
90d  
240  
60  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
180  
mJ  
W
300b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.5  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 74644  
S-71689-Rev. A, 13-Aug-07  
www.vishay.com  
1

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