Datasheet > SUP90N08-7M7P

SUP90N08-7M7P

更新时间： 2024-11-26 06:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
N-Channel 75-V (D-S) MOSFET

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SUP90N08-7M7P 数据手册

SUP90N08-7m7P

Vishay Siliconix

N-Channel 75-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFETS

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

•

100 % R_gand UIS Tested

90^d

0.0077 at V_GS= 10 V

RoHS

COMPLIANT

APPLICATIONS

•

Synchronous Rectification

TO-220AB

DRAIN connected to TAB

G D S

Top View

Ordering Information: SUP90N08-7m7P-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^d

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

90^d

180

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

125

208.3^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

0.6

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Package limited.

Document Number: 68638

S-81048-Rev. A, 12-May-08

www.vishay.com

12 3 4 5 6

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