Datasheet > SUP90N08-4M8P

SUP90N08-4M8P

更新时间： 2024-11-05 06:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	104K
描述
N-Channel 75-V (D-S) MOSFET

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SUP90N08-4M8P 数据手册

SUP90N08-4m8P

Vishay Siliconix

N-Channel 75-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Q_g(Typ)

175 °C Junction Temperature

100 % UIS Tested

90^d

0.0048 at V_GS= 10 V

0.006 at V_GS= 8 V

RoHS

105

COMPLIANT

APPLICATIONS

•

Power Supply

- Half-Bridge

- Secondary Synchronous Rectification

TO-220AB

• Industrial

G D

Top View

Ordering Information: SUP90N08-4m8P-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^d

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

90^d

240

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

245

300^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

0.5

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Package limited.

Document Number: 74281

S-71663-Rev. C, 06-Aug-07

www.vishay.com

12 3 4 5 6

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