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SUP90N08-6M8P_09 PDF预览

SUP90N08-6M8P_09

更新时间: 2024-11-06 08:58:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 176K
描述
N-Channel 75-V (D-S) MOSFET

SUP90N08-6M8P_09 数据手册

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SUP90N08-6m8P  
Vishay Siliconix  
N-Channel 75-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
175 °C Junction Temperature  
100 % Rg and UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
90d  
0.0068 at VGS = 10 V  
RoHS  
COMPLIANT  
75  
75  
APPLICATIONS  
Power Supply  
- Secondary Synchronous Rectification  
TO-220AB  
Industrial  
D
G
G D  
S
S
Top View  
Ordering Information: SUP90N08-6m8P-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
75  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
22  
90d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
90d  
240  
50  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
125  
mJ  
W
272b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.55  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 69538  
S09-2435-Rev. C, 16-Nov-09  
www.vishay.com  
1

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