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SUP90N08-4M8P-E3 PDF预览

SUP90N08-4M8P-E3

更新时间: 2024-11-26 06:14:59
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
6页 104K
描述
N-Channel 75-V (D-S) MOSFET

SUP90N08-4M8P-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Is Samacsys:N
雪崩能效等级(Eas):245 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):90 A
最大漏极电流 (ID):90 A最大漏源导通电阻:0.0085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SUP90N08-4M8P-E3 数据手册

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SUP90N08-4m8P  
Vishay Siliconix  
N-Channel 75-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
Qg (Typ)  
175 °C Junction Temperature  
100 % UIS Tested  
90d  
90d  
0.0048 at VGS = 10 V  
0.006 at VGS = 8 V  
RoHS  
75  
105  
COMPLIANT  
APPLICATIONS  
Power Supply  
- Half-Bridge  
- Secondary Synchronous Rectification  
TO-220AB  
Industrial  
D
G
G D  
S
S
Top View  
Ordering Information: SUP90N08-4m8P-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
75  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
90d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
90d  
240  
70  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Pulse Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
245  
mJ  
W
300b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.5  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 74281  
S-71663-Rev. C, 06-Aug-07  
www.vishay.com  
1

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