Datasheet > SUP90N03-03-E3

SUP90N03-03-E3

更新时间： 2024-09-15 06:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	105K
描述
N-Channel 30-V (D-S) MOSFET

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SUP90N03-03-E3 数据手册

New Product

SUP90N03-03

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^{a, e}

•

100 % R_gand UIS Tested

0.0029 at V_GS= 10 V

0.0033 at V_GS= 4.5 V

RoHS

82 nC

COMPLIANT

APPLICATIONS

•

OR-ing

Server

DC/DC

TO-220AB

DRAIN connected to TAB

G D S

Top View

N-Channel MOSFET

Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^{a, e}

90^e

28.8^{b, c}

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_A= 25 °C

T_A= 70 °C

27^{b, c}

I_DM

I_AS

Pulsed Drain Current

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

64.8

90^{a, e}

3.13^{b, c}

187^a

T_C= 25 °C

T_A= 25 °C

I_S

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

131

3.75^{b, c}

2.63^{b, c}

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Case

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

Steady State

°C/W

R_thJC

0.5

0.6

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

Document Number: 74341

S-70303-Rev. A, 12-Feb-07

www.vishay.com

12 3 4 5 6

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