SUP90330E
Vishay Siliconix
www.vishay.com
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
• ThunderFET® power MOSFET
TO-220AB
• Low RDS - Qg figure-of-merit (FOM)
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
G
APPLICATIONS
• Synchronous rectification
• Power supplies
Top View
D
PRODUCT SUMMARY
VDS (V)
• DC/AC inverter
200
G
• DC/DC converter
R
DS(on) max. () at VGS = 10 V
DS(on) max. () at VGS = 7.5 V
0.0375
0.0422
21
• Solar micro inverter
• Motor drive switch
R
Qg typ. (nC)
D (A)
S
I
35.1
N-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and halogen-free
SUP90330E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
35.8
Continuous drain current
ID
TC = 125 °C
20.7
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
IDM
IS
70
A
12.5
IAS
EAS
33
L = 0.1 mH
54.45
125 b
41.7 b
-55 to +175
260
mJ
W
TC = 25 °C
Maximum power dissipation
PD
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
SYMBOL
RthJA
MAXIMUM
UNIT
40
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
1.2
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
S17-0649-Rev. A, 01-May-17
Document Number: 74528
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000