5秒后页面跳转
SUP90330E PDF预览

SUP90330E

更新时间: 2024-11-06 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 154K
描述
N-Channel 200 V (D-S) 175 °C MOSFET

SUP90330E 数据手册

 浏览型号SUP90330E的Datasheet PDF文件第2页浏览型号SUP90330E的Datasheet PDF文件第3页浏览型号SUP90330E的Datasheet PDF文件第4页浏览型号SUP90330E的Datasheet PDF文件第5页浏览型号SUP90330E的Datasheet PDF文件第6页浏览型号SUP90330E的Datasheet PDF文件第7页 
SUP90330E  
Vishay Siliconix  
www.vishay.com  
N-Channel 200 V (D-S) 175 °C MOSFET  
FEATURES  
• ThunderFET® power MOSFET  
TO-220AB  
• Low RDS - Qg figure-of-merit (FOM)  
• Maximum 175 °C junction temperature  
• 100 % Rg and UIS tested  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
S
D
G
APPLICATIONS  
• Synchronous rectification  
• Power supplies  
Top View  
D
PRODUCT SUMMARY  
VDS (V)  
• DC/AC inverter  
200  
G
• DC/DC converter  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 7.5 V  
0.0375  
0.0422  
21  
• Solar micro inverter  
• Motor drive switch  
R
Qg typ. (nC)  
D (A)  
S
I
35.1  
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
TO-220AB  
Lead (Pb)-free and halogen-free  
SUP90330E-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
200  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
35.8  
Continuous drain current  
ID  
TC = 125 °C  
20.7  
Pulsed drain current (t = 100 μs)  
Continuous source-drain diode current  
Single pulse avalanche current a  
Single pulse avalanche energy a  
IDM  
IS  
70  
A
12.5  
IAS  
EAS  
33  
L = 0.1 mH  
54.45  
125 b  
41.7 b  
-55 to +175  
260  
mJ  
W
TC = 25 °C  
Maximum power dissipation  
PD  
TC = 125 °C  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient (PCB mount) c  
SYMBOL  
RthJA  
MAXIMUM  
UNIT  
40  
°C/W  
Maximum junction-to-case (drain)  
Steady state  
RthJC  
1.2  
Notes  
a. Duty cycle 1 %  
b. See SOA curve for voltage derating  
c. When mounted on 1" square PCB (FR4 material)  
S17-0649-Rev. A, 01-May-17  
Document Number: 74528  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SUP90330E相关器件

型号 品牌 获取价格 描述 数据表
SUP90N03-03 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SUP90N03-03-E3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SUP90N04-2M8P-E3 VISHAY

获取价格

TRANSISTOR 25 A, 40 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT
SUP90N04-3M3P VISHAY

获取价格

N-Channel 40 V (D-S) MOSFET
SUP90N04-3M3P-GE3 VISHAY

获取价格

N-Channel 40 V (D-S) MOSFET
SUP90N06-05L VISHAY

获取价格

N-Channel 60-V (D-S) 175C MOSFET
SUP90N06-5M0P VISHAY

获取价格

N-Channel 60-V (D-S) MOSFET
SUP90N06-5M0P-E3 VISHAY

获取价格

N-Channel 60-V (D-S) MOSFET
SUP90N06-6M0P VISHAY

获取价格

N-Channel 60-V (D-S) MOSFET
SUP90N06-6M0P_09 VISHAY

获取价格

N-Channel 60-V (D-S) MOSFET