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SUP90N03-03 PDF预览

SUP90N03-03

更新时间: 2024-11-05 06:14:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 105K
描述
N-Channel 30-V (D-S) MOSFET

SUP90N03-03 数据手册

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New Product  
SUP90N03-03  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
Qg (Typ)  
I
D (A)a, e  
90  
100 % Rg and UIS Tested  
0.0029 at VGS = 10 V  
0.0033 at VGS = 4.5 V  
RoHS  
30  
82 nC  
COMPLIANT  
90  
APPLICATIONS  
OR-ing  
Server  
DC/DC  
TO-220AB  
D
G
DRAIN connected to TAB  
S
G D S  
Top View  
N-Channel MOSFET  
Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
90a, e  
90e  
28.8b, c  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 175 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
27b, c  
IDM  
IAS  
Pulsed Drain Current  
90  
Avalanche Current Pulse  
Single Pulse Avalanche Energy  
36  
L = 0.1 mH  
EAS  
64.8  
V
A
90a, e  
3.13b, c  
187a  
TC = 25 °C  
TA = 25 °C  
IS  
Continuous Source-Drain Diode Current  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
131  
3.75b, c  
2.63b, c  
PD  
Maximum Power Dissipation  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Case  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 sec  
Steady State  
32  
40  
°C/W  
RthJC  
0.5  
0.6  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 sec.  
d. Maximum under Steady State conditions is 90 °C/W.  
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.  
Document Number: 74341  
S-70303-Rev. A, 12-Feb-07  
www.vishay.com  
1

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