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SUP90140E-GE3 PDF预览

SUP90140E-GE3

更新时间: 2024-11-23 19:49:35
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 150K
描述
Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

SUP90140E-GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.28雪崩能效等级(Eas):180 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):90 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUP90140E-GE3 数据手册

 浏览型号SUP90140E-GE3的Datasheet PDF文件第2页浏览型号SUP90140E-GE3的Datasheet PDF文件第3页浏览型号SUP90140E-GE3的Datasheet PDF文件第4页浏览型号SUP90140E-GE3的Datasheet PDF文件第5页浏览型号SUP90140E-GE3的Datasheet PDF文件第6页浏览型号SUP90140E-GE3的Datasheet PDF文件第7页 
SUP90140E  
Vishay Siliconix  
www.vishay.com  
N-Channel 200 V (D-S) 175 °C MOSFET  
FEATURES  
• ThunderFET® power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () MAX.  
ID (A)  
90  
Qg (TYP.)  
• Maximum 175 °C junction temperature  
• 100 % Rg and UIS tested  
0.017 at VGS = 10 V  
0.018 at VGS = 7.5 V  
200  
64 nC  
88  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
TO-220AB  
APPLICATIONS  
D
• Power supplies:  
- Uninterruptible power supplies  
- AC/DC switch-mode power supplies  
- Lighting  
G
• Synchronous rectification  
S
D
• DC/DC converter  
• Motor drive switch  
• DC/AC inverter  
G
Top View  
Ordering Information:  
SUP90140E-GE3 (lead (Pb)-free and halogen-free)  
S
N-Channel MOSFET  
• Solar micro inverter  
• Class D audio amplifier  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
200  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
C = 70 °C  
90  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
75  
A
Pulsed Drain Current (t = 100 μs)  
Avalanche Current  
IDM  
IAS  
240  
60  
L = 0.1 mH  
Single Avalanche Energy a  
EAS  
180  
mJ  
W
TC = 25 °C  
375 b  
125 b  
-55 to +175  
Maximum Power Dissipation a  
PD  
TC = 125 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
Junction-to-Ambient (PCB Mount) c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
0.4  
Notes  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When mounted on 1" square PCB (FR4 material).  
S15-2641-Rev. A, 16-Nov-15  
Document Number: 79036  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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