Datasheet > SUP85N10-10_06

SUP85N10-10_06

更新时间： 2024-11-05 06:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	104K
描述
N-Channel 100-V (D-S) 175 °C MOSFET

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SUP85N10-10_06 数据手册

SUP/SUB85N10-10

Vishay Siliconix

N-Channel 100-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Available

175 °C Maximum Junction Temperature

0.0105 at V_GS= 10 V

0.012 at V_GS= 4.5 V

RoHS*

85^a

COMPLIANT

100

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB85N10-10

N-Channel MOSFET

Top View

SUP85N10-10

ORDERING INFORMATION

Package

TO-220AB

TO-263

Tin/Lead Plated

SUP85N10-10

SUB85N10-10

Lead (Pb)-free

SUP85N10-10-E3

SUB85N10-10-E3

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

100

Unit

_C= 25 °C

85^a

I_D

Continuous Drain Current (T_J= 150 °C)

T_C= 125 °C

60^a

I_DM

I_AS

E_AS

240

280

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^b

L = 0.1 mH

T_C= 25 °C (TO-220AB and TO-263)

T_A= 25 °C (TO-263)^d

250^c

3.75

- 55 to 175

Maximum Power Dissipation^b

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Limit

Unit

PCB Mount (TO-263)^d

Free Air (TO-220AB)

Junction-to-Ambient

Junction-to-Case

°C/W

62.5

0.6

R_thJC

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve fo voltage derating.

d. When mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

www.vishay.com

12 3 4 5 6

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