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SUP75P03-08 PDF预览

SUP75P03-08

更新时间: 2024-09-12 22:17:19
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
4页 49K
描述
P-Channel 30-V (D-S), 175C MOSFET

SUP75P03-08 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.43
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):75 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):187 W
最大脉冲漏极电流 (IDM):200 A子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

SUP75P03-08 数据手册

 浏览型号SUP75P03-08的Datasheet PDF文件第2页浏览型号SUP75P03-08的Datasheet PDF文件第3页浏览型号SUP75P03-08的Datasheet PDF文件第4页 
SUP/SUB75P03-08  
Vishay Siliconix  
P-Channel 30-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
–30  
0.008  
–75  
S
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D S  
D
SUB75P03-08  
Top View  
P-Channel MOSFET  
SUP75P03-08  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
= 125_C  
–75  
C
Continuous Drain Current  
(T = 175_C)  
J
I
D
T
–65  
–200  
–75  
C
A
Pulsed Drain Current  
I
DM  
Avalanche Current  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
280  
mJ  
d
T
= 25_C (TO-220AB and TO-263)  
250  
C
Power Dissipation  
P
D
W
c
T
= 25_C (TO-263)  
3.7  
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
PCB Mount (TO-263)  
R
thJA  
R
thJA  
R
thJC  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
Free Air (TO-220AB)  
_C/W  
Notes:  
a. Package limited.  
b. Duty cycle v 1%.  
c. When mounted on 1” square PCB (FR-4 material).  
d. See SOA curve for voltage derating.  
Document Number: 70772  
S-05111—Rev. D, 10-Dec-99  
www.vishay.com  
1

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