Datasheet > SUP80090E

SUP80090E

更新时间： 2024-09-14 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	175K
描述
N-Channel 150 V (D-S) MOSFET

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SUP80090E 数据手册

SUP80090E

Vishay Siliconix

www.vishay.com

N-Channel 150 V (D-S) MOSFET

FEATURES

• ThunderFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

I_D(A)

128

Q_g(TYP.)

• Maximum 175 °C junction temperature

• 100 % R_gand UIS tested

0.0094 at V_GS= 10 V

0.0110 at V_GS= 7.5 V

150

63 nC

119

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-220AB

APPLICATIONS

• Power supplies:

- Uninterruptible power supplies

- AC/DC switch-mode power supplies

- Lighting

• Synchronous rectification

• DC/DC converter

• Motor drive switch

• DC/AC inverter

Top View

Ordering Information:

SUP80090E-GE3 (lead (Pb)-free and halogen-free)

N-Channel MOSFET

• Solar micro inverter

• Class D audio amplifier

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

150

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

128

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 125 °C

Pulsed Drain Current (t = 100 μs)

Avalanche Current

I_DM

I_AS

240

L = 0.1 mH

Single Avalanche Energy ^a

E_AS

180

T_C= 25 °C

375 ^b

125 ^b

-55 to +175

Maximum Power Dissipation ^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient (PCB Mount) ^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR4 material).

S16-0087-Rev. A, 25-Jan-16

Document Number: 65384

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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