Datasheet > SUP75N06L

SUP75N06L

更新时间： 2024-09-13 15:53:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
Transistor

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中文翻译

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技术参数
数据手册

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SUP75N06L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SUP75N06L 数据手册

SUP/SUB75N06-07L

Vishay Siliconix

N-Channel 60-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.0075 @ V = 10 V

0.0085 @ V = 4.5 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB75N06-07L

Top View

N-Channel MOSFET

SUP75N06-07L

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

= 125_C

Continuous Drain Current

(T = 175

_C)

240

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

280

= 25_C (TO-220AB and TO-263)

187

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.8

Junction-to-Ambient

Junction-to-Case

thJA

thJC

C/W

Free Air (TO-220AB)

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70776

S-00652—Rev. E, 27-Mar-00

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4

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