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SUP75N03-07 PDF预览

SUP75N03-07

更新时间: 2024-11-11 22:17:19
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 61K
描述
N-Channel 30-V (D-S) 175C MOSFET

SUP75N03-07 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):75 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):120 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SUP75N03-07 数据手册

 浏览型号SUP75N03-07的Datasheet PDF文件第2页浏览型号SUP75N03-07的Datasheet PDF文件第3页浏览型号SUP75N03-07的Datasheet PDF文件第4页 
SUP/SUB75N03-07  
Vishay Siliconix  
N-Channel 30-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
0.007 @ V = 10 V  
75  
GS  
30  
0.01 @ V = 4.5 V  
GS  
70  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D S  
Top View  
S
N-Channel MOSFET  
SUB75N03-07  
SUP75N03-07  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
a
T
C
= 25_C  
75  
Continuous Drain Current (T = 175_C)  
I
D
J
T
C
= 100_C  
64  
240  
75  
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
280  
mJ  
W
AR  
c
Power Dissipation  
T
C
= 25_C  
P
120  
D
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
thJC  
_
C/W  
Free Air (TO-220AB)  
62.5  
1.25  
R
Notes:  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 70794  
S-000652—Rev. D, 27-Mar-00  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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