SUP75N03-04

更新时间： 2024-09-22 22:17:19

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	43K
描述
N-Channel 30-V (D-S), 175C MOSFET

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技术参数
数据手册

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SUP75N03-04 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.86	配置：	Single
最大漏极电流 (Abs) (ID)：	75 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	187 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SUP75N03-04 数据手册

SUP/SUB75N03-04

Vishay Siliconix

N-Channel 30-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.004

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

SUB75N03-04

G D

Top View

SUP75N03-04

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

Continuous Drain Current

(T = 175_C)

= 125_C

Pulsed Drain Current

250

Continuous Source Current (Diode Conduction)

Avalanche Current

Avalanche Energy

L = 0.1 mH

280

140

Repetitive Avalanche Energy

L = 0.05 mH

= 25_C (TO-220AB and TO-263)

187

Maximum Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

Lead Temperature

TO-220AB

300

( / ” from case for 10 sec.)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

_C/W

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70745

S-04137—Rev. E, 18-Jun-01

www.vishay.com

2-1

12 3 4

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