是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.31 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 70 A |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.009 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 93 W |
最大脉冲漏极电流 (IDM): | 180 A | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SUP70N03-09BP-E3 | VISHAY |
功能相似 |
暂无描述 | |
SUP50N03-5M1P-GE3 | VISHAY |
功能相似 |
N-Channel 30 V (D-S) MOSFET | |
SUP70N03-09BP | VISHAY |
功能相似 |
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUP70N03-09P-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUP70N04-10 | VISHAY |
获取价格 |
N-Channel 40-V (D-S) | |
SUP70N04-10-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUP70N06-14 | VISHAY |
获取价格 |
N-Channel 60-V (D-S), 175 Degree Celcious MOSFET | |
SUP70N06-14-E3 | VISHAY |
获取价格 |
暂无描述 | |
SUP75N03-04 | VISHAY |
获取价格 |
N-Channel 30-V (D-S), 175C MOSFET | |
SUP75N03-04-E3 | VISHAY |
获取价格 |
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB | |
SUP75N03-07 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) 175C MOSFET | |
SUP75N04-05L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB | |
SUP75N05-06 | VISHAY |
获取价格 |
N-Channel 50-V (D-S), 175C MOSFET |