Datasheet > SUP70N06-14-E3

SUP70N06-14-E3

更新时间： 2024-09-23 20:00:03

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威世 - VISHAY		/
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SUP70N06-14-E3 数据手册

SUP/SUB70N03-09BP

New Product

Vishay Siliconix

N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.009 @ V = 10 V

0.013 @ V = 4.5 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D

Top View

SUP70N03-09BP

N-Channel MOSFET

SUB70N03-09BP

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 100_C

Continuous Drain Current (T = 175_C)

200

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

Power Dissipation

= 25_C

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

1.6

Junction-to-Ambient

Junction-to-Case

thJA

Free Air (TO-220AB)

_C/W

thJC

Notes:

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

Document Number: 71229

S-20102—Rev. B, 11-Mar-02

www.vishay.com

12 3 4 5 6

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