Datasheet > SUP65P06

SUP65P06

更新时间： 2024-11-12 03:23:19

品牌	Logo	应用领域
TEMIC		晶体晶体管
页数	文件大小	规格书
4页	60K
描述
P-Channel Enhancement-Mode Transistors

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SUP65P06 数据手册

SUP/SUB65P06-20

P-Channel Enhancement-Mode Transistors

Product Summary

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

–60

0.020

–65

TOĆ220AB

TOĆ263

DRAIN connected to TAB

D S

Top View

G D S

SUB65P06Ć20

Top View

PĆChannel MOSFET

SUP65P06Ć20

Absolute Maximum Ratings (T_C= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

= 125_C

–65

Continuous Drain Current

(T = 175

_C)

–39

–200

–60

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

180

= 25_C (TO-220AB and TO-263)

187

Power Dissipation

= 125_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

Thermal Resistance Ratings

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

thJA

thJC

62.5

0.8

Junction-to-Ambient

Junction-to-Case

_C/W

Free Air (TO-220AB)

Notes:

a. Package limited.

b. Duty cycle v 1%.

c. When mounted on 1” square PCB (FR-4 material).

d. See SOA curve for voltage derating.

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.

A SPICE Model data sheet is available for this product (FaxBack document #70543).

Siliconix

P-39628—Rev. A, 28-Dec-94

12 3 4

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