Datasheet > SUP70090E

SUP70090E

更新时间： 2024-11-13 14:55:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	157K
描述
N-Channel 100 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUP70090E 数据手册

SUP70090E

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

• ThunderFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

I_D(A) ^c

Q_g(TYP.)

• Maximum 175 °C junction temperature

0.0089 at V_GS= 10 V

0.0093 at V_GS= 7.5 V

• Q_gd/ Q_gsratio < 1 optimizes switching

characteristics

100

33 nC

• 100 % R_gand UIS tested

TO-220AB

• Material categorization:

for definitions of compliance please

see www.vishay.com/doc?99912

APPLICATIONS

• Power supply

- Secondary synchronous rectification

• DC/DC converter

• Power tools

Top View

• Motor drive switch

• DC/AC inverter

Ordering Information:

SUP70090E-GE3 (lead (Pb)-free and halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

50 ^c

Continuous Drain Current (T_J= 150 °C)

I_D

50 ^c

Pulsed Drain Current (t = 100 μs)

Avalanche Current

I_DM

I_AS

120

Single Avalanche Energy ^a

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C ^b

E_AS

125

Maximum Power Dissipation ^a

P_D

87.5

-55 to +175

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient (PCB Mount) ^b

°C/W

Junction-to-Case (Drain)

R_thJC

1.2

Notes

a. Duty cycle  1 %.

b. When mounted on 1" square PCB (FR4 material).

c. Package limited.

S16-0163-Rev. A, 01-Feb-16

Document Number: 65436

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SUP70090E相关器件

型号	品牌	获取价格	描述	数据表
SUP70090E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, M
SUP70101EL	VISHAY	获取价格	P-Channel 100 V (D-S) 175 °C MOSFET
SUP70N03-09	VISHAY	获取价格	TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN,
SUP70N03-09BP	VISHAY	获取价格	N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
SUP70N03-09BP-E3	VISHAY	获取价格	暂无描述
SUP70N03-09P	VISHAY	获取价格	N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
SUP70N03-09P-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUP70N04-10	VISHAY	获取价格	N-Channel 40-V (D-S)
SUP70N04-10-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUP70N06-14	VISHAY	获取价格	N-Channel 60-V (D-S), 175 Degree Celcious MOSFET