Datasheet > SUP60N10

SUP60N10

更新时间： 2024-09-23 12:57:39

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	757K
描述
60A,100V Heatsink Trench N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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SUP60N10 数据手册

FMG21S thru FMG26S

FMG21S/FMG22S/FMG23S/FMG24S/FMG25S/FMG26S

Pb Free Plating Product

10 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

.189(4.8)

.406(10.3)

.165(4.2)

.381(9.7)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.134(3.4)

.130(3.3)

.118(3.0)

.114(2.9)

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 1.75 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "U" Suffix "UR"

Series

Negative

Common Cathode Common Anode

Suffix "S" Suffix "R"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

℃

Rating at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

FMG25S

FMG23S

FMG21S

UNIT

SYMBOL

FMG22S

FMG24S

FMG26S

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

10.0

100

1.3

IF(AV)

(Total Device 2*5A=10A)

Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

1.7

0.98

(Both Diode/Per Diode/Per Leg)

@ 5.0 A

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

μA

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

℃

R JC

3.0

Operating Junction and Storage

Temperature Range

-55 to +150

℃

TJ, TSTG

NOTES : (1) Reverse recovery test conditions I^F= 0.5A, I^R= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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与SUP60N10相关器件

型号	品牌	获取价格	描述	数据表
SUP60N10-16L	VISHAY	获取价格	N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUP60N10-18P-E3	VISHAY	获取价格	N-CH MOSFET TO-220 100V 18MOHM @ 10V - Rail/Tube
SUP60N6-18	ETC	获取价格
SUP60P06-20	VISHAY	获取价格	Power Field-Effect Transistor, 60A I(D), 60V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
SUP65P04-15	VISHAY	获取价格	P-Channel 40-V (D-S) 175C MOSFET
SUP65P06	TEMIC	获取价格	P-Channel Enhancement-Mode Transistors
SUP65P06-20	VISHAY	获取价格	P-Channel 60-V (D-S), 175C MOSFET
SUP65P06-20	TEMIC	获取价格	P-Channel Enhancement-Mode Transistors
SUP70030E	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SUP70040E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, M

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