Datasheet > SUP60N6-18

SUP60N6-18

更新时间： 2024-09-22 23:35:31

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SUP60N6-18 数据手册

SUP/SUB60N06-18

N-Channel Enhancement-Mode Transistors

Product Summary

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.018

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

N-Channel MOSFET

SUB60N06-18

Top View

SUP60N06-18

Absolute Maximum Ratings (T_C= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 100_C

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Avalanche Current

120

Repetitive Avalanche Energy

L = 0.1 mH

180

= 25_C (TO-220AB and TO-263)

120

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

Thermal Resistance Ratings

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

Junction-to-Ambient

Junction-to-Case

thJA

thJC

_C/W

Free Air (TO-220AB)

62.5

1.25

Notes:

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70290.

A SPICE Model data sheet is available for this product (FaxBack document #70540).

Siliconix

S-47970—Rev. C, 08-Jul-96

12 3 4

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