Datasheet > SUP60N06-18

SUP60N06-18

更新时间： 2024-09-22 22:17:19

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管局域网
页数	文件大小	规格书
4页	75K
描述
N-Channel 60-V (D-S), 175C MOSFET

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SUP60N06-18 数据手册

SUP/SUB60N06-18

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.018

TO-220AB

TO-263

DRAIN connected to TAB

D S

G D S

Top View

SUB60N06-18

SUP60N06-18

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 100_C

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Avalanche Current

120

Repetitive Avalanche Energy

L = 0.1 mH

180

= 25_C (TO-220AB and TO-263)

120

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

62.5

1.25

C/W

Notes:

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70290

S–57253—Rev. D, 24-Feb-98

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4

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SUP60N06-18 替代型号

型号	品牌	替代类型	描述	数据表
STP10P6F6	STMICROELECTRONICS	功能相似	P-channel 60 V, 0.15 Î© typ., 10 A STripFETâ
NTE2388	NTE	功能相似	MOSFET N-Channel Enhancement Mode, High Speed Switch
SPP20N60S5	INFINEON	功能相似	Cool MOS⑩ Power Transistor

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