Datasheet > SUP60N02-4M5P

SUP60N02-4M5P

更新时间： 2024-11-12 08:58:07

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威世 - VISHAY		/
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描述
N-Channel 20-V (D-S) 175 °C MOSFET

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SUP60N02-4M5P 数据手册

SUP60N02-4m5P

Vishay Siliconix

N-Channel 20-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Junction Temperature

100 % R_gTested

_D(A)^a

V_(BR)DSS(V)

r_DS(on)(Ω)

RoHS

0.0045 at V_GS= 10 V

0.0065 at V_GS= 4.5 V

COMPLIANT

100 % UIS Tested

APPLICATIONS

OR-ing

•

TO-220AB

DRAIN connected to TAB

G D

Top View

N-Channel MOSFET

Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

60^a

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

60^a

120

T_C= 100 °C

I_DM

I_AS

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

125

120^c

3.75

Maximum Power Dissipation^b

P_D

_A= 25 °C^d

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^d

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case

1.25

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When mounted on 1" square PCB (FR-4 material).

Document Number: 69821

S-80182-Rev. A, 04-Feb-08

www.vishay.com

12 3 4 5 6

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