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SUP57N20-33_08 PDF预览

SUP57N20-33_08

更新时间: 2024-11-12 06:14:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 97K
描述
N-Channel 200-V (D-S) 175 °C MOSFET

SUP57N20-33_08 数据手册

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SUP57N20-33  
Vishay Siliconix  
N-Channel 200-V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
175 °C Junction Temperature  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
Available  
0.033 at VGS = 10 V  
200  
57  
RoHS*  
COMPLIANT  
APPLICATIONS  
Isolated DC/DC converters  
- Primary-Side Switch  
TO-220AB  
D
DRAIN connected to TAB  
G
G D S  
Top View  
S
Ordering Information: SUP57N20-33  
SUP57N20-33-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
200  
20  
V
VGS  
TC = 25 °C  
57  
Continuous Drain Current (TJ = 175 °C)  
ID  
TC = 125 °C  
33  
A
IDM  
IAS  
Pulsed Drain Current  
140  
35  
Avalanche Current  
Single Pulse Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
61  
mJ  
W
300b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.5  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72100  
S-71662-Rev. B, 06-Aug-07  
www.vishay.com  
1

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