Datasheet > SUP57N20-33_08

SUP57N20-33_08

更新时间： 2024-11-12 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	97K
描述
N-Channel 200-V (D-S) 175 °C MOSFET

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SUP57N20-33_08 数据手册

SUP57N20-33

Vishay Siliconix

N-Channel 200-V (D-S) 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

175 °C Junction Temperature

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Available

•

0.033 at V_GS= 10 V

200

RoHS*

COMPLIANT

APPLICATIONS

•

Isolated DC/DC converters

- Primary-Side Switch

TO-220AB

DRAIN connected to TAB

G D S

Top View

Ordering Information: SUP57N20-33

SUP57N20-33-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

200

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 125 °C

I_DM

I_AS

Pulsed Drain Current

140

Avalanche Current

Single Pulse Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

300^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

0.5

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72100

S-71662-Rev. B, 06-Aug-07

www.vishay.com

12 3 4 5 6

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