SUP60020E
Vishay Siliconix
www.vishay.com
N-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
TO-220AB
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
APPLICATIONS
D
G
Top View
• Power supply
- Secondary synchronous rectification
PRODUCT SUMMARY
• DC/DC converter
VDS (V)
80
• Power tools
G
R
DS(on) max. () at VGS = 10 V
DS(on) max. () at VGS = 7.5 V
0.0024
0.0028
151.2
150 d
• Motor drive switch
• DC/AC inverter
R
Qg typ. (nC)
D (A)
• Battery management
S
I
• OR-ing / e-fuse
Configuration
Single
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
SUP60020E-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
80
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
C = 70 °C
150 d
150 d
500
Continuous drain current (TJ = 150 °C)
ID
T
A
Pulsed drain current (t = 100 μs)
Avalanche current
IDM
IAS
60
Single avalanche energy a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
EAS
180
mJ
W
375 b
125 b
-55 to +175
Maximum power dissipation a
PD
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
40
UNIT
Junction-to-ambient (PCB mount) c
°C/W
Junction-to-case (drain)
RthJC
0.4
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S19-0182-Rev. A, 25-Feb-2019
Document Number: 77056
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000